Dopant redistribution in heavily doped silicon: Confirmation of the validity of the vacancy-percolation model.

Autor: Mathiot, D., Pfister, J. C.
Předmět:
Zdroj: Journal of Applied Physics; 7/15/1989, Vol. 66 Issue 2, p970, 3p
Abstrakt: Discusses the physical origin of the diffusion enhancement observed at high doping levels during the annealing of dopant-implanted silicon. Values of the effective antimony diffusivity.
Databáze: Complementary Index