Dopant redistribution in heavily doped silicon: Confirmation of the validity of the vacancy-percolation model.
Autor: | Mathiot, D., Pfister, J. C. |
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Zdroj: | Journal of Applied Physics; 7/15/1989, Vol. 66 Issue 2, p970, 3p |
Abstrakt: | Discusses the physical origin of the diffusion enhancement observed at high doping levels during the annealing of dopant-implanted silicon. Values of the effective antimony diffusivity. |
Databáze: | Complementary Index |
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