| Autor: |
Hayes, Todd R., Wetzel, Robert C., Baiocchi, Frank A., Freund, Robert S. |
| Předmět: |
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| Zdroj: |
Journal of Chemical Physics; 1/15/1988, Vol. 88 Issue 2, p823, 7p |
| Abstrakt: |
Absolute cross sections for electron-impact ionization of the SiF free radical from threshold to 200 eV are presented for formation of the parent SiF+ ion and the fragment Si+ and F+ ions. A fast beam of SiF is prepared by charge transfer neutralization of an SiF+ beam. The radicals form in the ground electronic state and predominantly in their ground vibrational state, as shown by agreement of the measured ionization threshold with the ionization potential. The absolute cross section for SiF→SiF+ at 70 eV is 3.90±0.32 Å2. The ratio of cross sections for formation of Si+ to that for SiF+ at 70 eV is 0.528±0.024; the ratio for formation of F+ to that of SiF+ is 0.060±0.008. The observed threshold energy for Si+ formation indicates the importance of ion pair formation SiF→Si++F-. Breaks in the cross section at 14.3 and 17 eV are assigned as dissociative ionization thresholds. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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