| Autor: |
Kim, Y., Spence, J. C. H., Long, N., Bergholz, W., O’Keeffe, M. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 7/15/1987, Vol. 62 Issue 2, p419, 4p, 4 Black and White Photographs, 1 Diagram, 1 Graph |
| Abstrakt: |
Presents a study that examined the coherent electron microdiffraction patterns of silicon oxide precipitates in silicon semiconductor wafers. Methodology; Analysis of the transmission electron micrographs of the precipitates; Determination of the size of the precipitates. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
