Dark line defect growth in optically pumped AlxGa1-xAs laser material.

Autor: Schwartz, B. D.
Předmět:
Zdroj: Journal of Applied Physics; 7/15/1985, Vol. 58 Issue 2, p677, 6p, 2 Black and White Photographs, 2 Diagrams, 1 Chart, 4 Graphs
Abstrakt: Deals with a study which observed the growth of dark line defects (DLD) in epitaxial AlGaAs wafers under optical pumping. Function of optical intensity; Factor that contributes to the elongation of DLD in (100) and (110) directions; Result of the presence of a climb mechanism.
Databáze: Complementary Index