Dark line defect growth in optically pumped AlxGa1-xAs laser material.
Autor: | Schwartz, B. D. |
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Předmět: | |
Zdroj: | Journal of Applied Physics; 7/15/1985, Vol. 58 Issue 2, p677, 6p, 2 Black and White Photographs, 2 Diagrams, 1 Chart, 4 Graphs |
Abstrakt: | Deals with a study which observed the growth of dark line defects (DLD) in epitaxial AlGaAs wafers under optical pumping. Function of optical intensity; Factor that contributes to the elongation of DLD in (100) and (110) directions; Result of the presence of a climb mechanism. |
Databáze: | Complementary Index |
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