| Autor: |
Forrest, S. R., Kaplan, M. L., Schmidt, P. H., Parsey, J. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/15/1985, Vol. 58 Issue 2, p867, 4p, 4 Graphs |
| Abstrakt: |
Studies the formation of high contact barriers in the thin films of the organic compound perylenetetracarboxylic dianhydride (PTCDA) deposited on gallium arsenide substrates. Bipolar current-voltage characteristics of a gallium arsenide/PTCDA diode; Organic materials used for organic-on-inorganic diode formation; Carrier concentration of the gallium arsenide used in the experiment. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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