| Autor: |
Collins, R. W., Windischmann, H., Cavese, J. M., Gonzalez-Hernandez, J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/15/1985, Vol. 58 Issue 2, p954, 4p, 2 Charts, 10 Graphs |
| Abstrakt: |
Examines the optical properties of ion-beam-sputtered silicon and germanium using spectroscopic ellipsometry. Discrepancies between the structure of the p-silicon deduced from Raman and ellipsometry spectra; Significance of thin-film polycrystalline silicon; Psuedodielectric functions for ion-beam-deposited silicon prepared at different substrate temperatures. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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