The origin of quantum efficiencies greater than unity in a-Si:H Schottky barriers.
| Autor: | Rubinelli, F. A. |
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| Zdroj: | Journal of Applied Physics; 1/15/1994, Vol. 75 Issue 2, p998, 7p, 7 Graphs |
| Abstrakt: | Provides information on a study that showed that the quantum efficiency greater than one can be obtained in a-Si-H Schottky barrier structure from photogating, even when the amorphous material is in the annealed state. Details on the experimental results; Physics of the phenomenon; Conclusions. |
| Databáze: | Complementary Index |
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