| Autor: |
Ashwin, M. J., Fahy, M., Harris, J. J., Newman, R. C., Sansom, D. A., Addinall, R., McPhail, D. S., Sharma, V. K. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/15/1993, Vol. 73 Issue 2, p633, 7p, 1 Chart, 4 Graphs |
| Abstrakt: |
Presents a study on the incorporation of silicon delta-doped planes in GaAs grown by molecular beam epitaxy at 400°Celsius, in the concentration range 0.01-0.5 monolayers. Methodology using secondary ion mass spectrometry, local vibrational mode infrared absorption and electrical characterization; Details on the measurements of the carrier concentration; Interpretation of effects in terms of an aggregation model based on silicon surface migration. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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