| Autor: |
Marie, X., Barrau, J., Brousseau, B., Amand, Th., Brousseau, M., Rao, E. V. K., Alexandre, F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/15/1991, Vol. 69 Issue 2, p812, 4p, 3 Charts, 3 Graphs |
| Abstrakt: |
Studies excitonic transitions in pseudomorphic single quantum wells of In[subx]Ga[sub1-x]As grown on a gallium arsenide substrate. Reason for the interest in strained-layer superlattices and quantun wells; Photocurrent spectra of the samples; Approximations made in the calculation of the confinement energies. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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