| Autor: |
Tanabe, A., Konuma, K., Teranishi, N., Tohyama, S., Masubuchi, K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/15/1991, Vol. 69 Issue 2, p850, 4p, 2 Black and White Photographs, 6 Graphs |
| Abstrakt: |
Examines the barrier height inhomogeneity in platinum silicide (PtSi)/p- type silicon (Si) contacts by internal photoemission. Influence of Fermi-level pinning on barrier height inhomogeneity in PtSi/p-type Si Schottky contacts; Interface structures in PtSi/Si contacts; Examination of the origins of Region II formation in both PtSi/Si and iridium silicide/Si contacts. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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