Anisotropy control in CF4 microwave plasma etching.
| Autor: | Pelletier, J., Cooke, M. J. |
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| Předmět: | |
| Zdroj: | Journal of Applied Physics; 1/15/1989, Vol. 65 Issue 2, p464, 4p |
| Abstrakt: | Presents a parametric study of the etching of silicon with CF[sub4] in a multipolar microwave plasma. Types of gases used to achieve anisotropic plasma etching profiles in silicon; Correlative evolutions of anisotropy and etch rate of silicon; Explanation for the polymer formation on silicon surfaces. |
| Databáze: | Complementary Index |
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