| Autor: |
Shim, Tae Earn, Itoh, Tadatsugu |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/15/1989, Vol. 65 Issue 2, p486, 5p |
| Abstrakt: |
Describes the annealing characteristics of implanted damage and the electrical properties for Sn[sup+] and Si[sup+] dual implanted gallium arsenide (GaAs). Covalent radii of the atoms and the effect of dopant on lattice parameter of GaAs; Depth profiles of carrier concentrations and mobilities for samples singly implanted with Si[+] or Sn[sup+] ions; Implications of the decreasing of the ionization impurity ratio. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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