Tantalum silicide Schottky contacts to GaAs.

Autor:	Lee, C. P., Liu, T. H., Lei, T. F., Wu, S. C.
Předmět:	TANTALUM SILICIDES GALLIUM arsenide SEMICONDUCTOR films INTERFACES (Physical sciences)
Zdroj:	Journal of Applied Physics; 1/15/1989, Vol. 65 Issue 2, p642, 4p, 8 Graphs
Abstrakt:	Examines the tantalum silicide films with different silicon to tantalum ratios as Schottky contacts to gallium arsenide. Preparation of the films by coevaporation; Metallurgical properties of the film; Stability of the silicide-gallium arsenide interface.
Databáze:	Complementary Index
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