The role of reflectivity change in optically induced recrystallization of thin silicon films.

Autor: Grigoropoulos, Costas P., Buckholz, Richard H., Domoto, Gerald A.
Předmět:
Zdroj: Journal of Applied Physics; 1/15/1986, Vol. 59 Issue 2, p454, 5p, 1 Diagram, 4 Graphs
Abstrakt: Investigates a model of the fundamental mechanisms governing the radiatively induced recrystallization of a thin polysilicon layer on a heat-sink structure. Occurrence of instabilities in laser induced crystal growth on thin polysilicon layers; Method used for studying solidification instabilities; Indication of the reflectivity difference between the liquid and the solid phases.
Databáze: Complementary Index