| Autor: |
Rao, E. V. K., Alexandre, F., Masson, J. M., Allovon, M., Goldstein, L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/15/1985, Vol. 57 Issue 2, p503, 6p, 6 Black and White Photographs, 1 Chart |
| Abstrakt: |
Discusses the performance of low-temperature photoluminescence measurements on several molecular-beam epitaxial high-quality gallium arsenide layers showing varied electrical characteristics. System in which gallium arsenide films were grown; Description of the electrical characteristics and relevant growth details on gallium arsenide layers investigated; Changes seen on the samples. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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