| Autor: |
Leavitt, R. P., Bradshaw, J. L., Pham, J. T., Tobin, M. S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1994, Vol. 75 Issue 4, p2215, 12p, 16 Graphs |
| Abstrakt: |
Presents a simple model for photocurrent spectroscopy of quantum-well p-i-n diodes that provides a quantitatively accurate description of the dependence of the photocurrent on absorption coefficient and applied bias. Incorporation of the transit-time effect; Inclusion of the two major effects of residual background doping in the intrinsic region of the diode; Effect of the background doping effect on the transit-time effects. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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