Nucleation and deposition of W on GaAs by excimer laser-assisted chemical vapor deposition.

Autor: van Maaren, A. J. P., Sinke, W. C., Flicstein, J.
Předmět:
Zdroj: Journal of Applied Physics; 2/15/1993, Vol. 73 Issue 4, p1981, 8p, 2 Black and White Photographs, 1 Chart, 8 Graphs
Abstrakt: Reports on the deposition mechanism involved in photochemical vapor deposition of tungsten (W) of gallium arsenide. Examination of the temperature dependence of the deposition rate; Properties of W; Details of the procedure of the deposition experiments.
Databáze: Complementary Index