| Autor: |
Guillemot, N., Tsoukalas, D., Tsamis, C., Margail, J., Papon, A. M., Stoemenos, J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1992, Vol. 71 Issue 4, p1713, 8p, 9 Black and White Photographs, 1 Diagram, 2 Charts |
| Abstrakt: |
Argues that oxidation of the silicon overlayer in silicon separated by oxygen (SIMOX) is expected to form oxidation stacking faults (OSF) since this process generates silicon interstitials into the active silicon layer. Mechanism used to explain the absence of OSF in SIMOX; Role played by the SIMOX material; Factor attractive in submicrometer complementary metal-oxide-semiconductor. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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