Characteristics of silicon nitride deposited by plasma-enhanced chemical vapor deposition using a dual frequency radio-frequency source.

Autor:	Pearce, C. W., Fetcho, R. F., Gross, M. D., Koefer, R. F., Pudliner, R. A.
Předmět:	CHEMICAL vapor deposition SILICON nitride THIN films
Zdroj:	Journal of Applied Physics; 2/15/1992, Vol. 71 Issue 4, p1838, 4p
Abstrakt:	Studies the effect of plasma excitation frequency on the properties of plasma-enhanced chemical vapor deposition silicon nitride films. Application of plasma-deposited silicon nitride; Details on the experiment; Discussion on the results of the study.
Databáze:	Complementary Index
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