| Autor: |
Yao, J. Y., Andersson, T. G., Dunlop, G. L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1991, Vol. 69 Issue 4, p2224, 7p |
| Abstrakt: |
Presents information on a study which investigated the microstructure of strained layers of In[subx]Ga[sub1-x]As/gallium arsenide grown by molecular beam epitaxy (MBE) by transmission electron microscopy (TEM). Structures grown on MBE; Specimen preparation for TEM; Influence of inhomogenous lattice strain on interfacial morphologies. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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