| Autor: |
Kanicki, J., Libsch, F. R., Griffith, J., Polastre, R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1991, Vol. 69 Issue 4, p2339, 7p |
| Abstrakt: |
Discusses a study which analyzed the influence of the mask channel length on the performance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFT). Structure fabrication of TFT; Method of reducing the source/drain contact series resistance; Effects of the reduction of a-Si:H film thickness and deep gap state density. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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