| Autor: |
Shaw, John G., Hack, Michael G., Martin, Russel A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1991, Vol. 69 Issue 4, p2667, 6p, 2 Diagrams, 8 Graphs |
| Abstrakt: |
Investigates high-voltage amorphous silicon thin-film transistor by which large drain voltages are controlled by a low gate potential. Use of extra deep traps which are generated by the equilibration of stressed amorphous silicon; Application of numerical device simulator; Assumptions of exponential distributions of deep and shallow states. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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