| Autor: |
Zhou, Jie, Wu, Ji-an, Lu, Li-wu, Han, Zhi-yuong |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1991, Vol. 69 Issue 4, p2746, 3p, 3 Graphs |
| Abstrakt: |
Examines the physical behavior of ruthenium (Ru) atom in silicon. Theoretical calculation of electronic states for substitutional Ru atom in silicon; Application of the diffusion technology of palladium and rhodium impurities in silicon; Measurement of the deep level transient spectroscopy spectra of a sample annealed at the same conditions of temperature and atmosphere but without Ru. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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