| Autor: |
Siegel, W., Kühnel, G., Schneider, H. A., Witte, H., Flade, T. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 2/15/1991, Vol. 69 Issue 4, p2245, 6p, 1 Chart, 6 Graphs |
| Abstrakt: |
Reports on the detection of deep level and compensation mechanism in undoped, liquid-encapsulated Czochralski (LEC) gallium arsenide (GaAs). Details of the experimental techniques used; Description of a model for the different electrical properties of LEC GaAs; Explanation for the deviation of crystals from the desired semi-insulating behavior. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
