| Autor: |
LeGoues, F. K., Rosenberg, R., Nguyen, T., Himpsel, F., Meyerson, B. S. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 2/15/1989, Vol. 65 Issue 4, p1724, 5p |
| Abstrakt: |
Presents a study which examined the kinetics and mechanism of oxidation of silicon germanide alloys deposited epitaxially onto silicon substrates by low-temperature chemical vapor deposition. Role of germanium in oxidation; Electrical properties of the oxides formed under the conditions; Comparison with the mechanism of oxidation of pure silicon. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
