Evaluation of structural quality of a silicon carbide (6H-SiC) single crystal grown by a vapor transport method by Rutherford backscattering spectroscopy.

Autor:	Kobayashi, Takane, Iwaki, Masaya, Sakairi, Hideo, Aono, Masakazu, Inomata, Yoshizo
Předmět:	SILICON carbide BACKSCATTERING SPECTRUM analysis SILICON
Zdroj:	Journal of Applied Physics; 2/15/1989, Vol. 65 Issue 4, p1790, 3p
Abstrakt:	Presents a study which evaluated the structural quality of a silicon carbide single crystal grown by a vapor transport method using Rutherford backscattering spectroscopy experiments. Characteristics of silicon carbide; Information on the angular dependence of the intensity of helium particles scattered from the silicon atoms; Details on the RBS spectra of the silicon carbide single crystal.
Databáze:	Complementary Index
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