| Autor: |
Nakajima, Hideo, Fujimori, Hiroyasu, Koiwa, Masahiro |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1988, Vol. 63 Issue 4, p1046, 6p, 2 Charts, 10 Graphs |
| Abstrakt: |
Discusses a study which analyzed the interdiffusion and structural change of sputter-deposited molybdenum (Mo)/silicon (Si) and Mo(nitrogen)/Si(nitrogen) multilayer films on annealing. Preparation of Mo/Si films; Temperature dependence of interdiffusivities in Mo/Si films; Reduction of modulation wavelength and film thickness on annealing. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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