| Autor: |
Kanemaru, Seigo, Ishiwara, Hiroshi, Furukawa, Seijiro |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 2/15/1988, Vol. 63 Issue 4, p1060, 5p, 3 Black and White Photographs, 1 Diagram, 4 Graphs |
| Abstrakt: |
Presents a heteroepitaxy method of germanium films on calcium fluoride/silicon structures. Influence of electron beam exposure on the predeposited germanium layer; Measurement of the dependencies on electron dose and dose rate; Chemical bond dissociation of calcium fluoride surfaces. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
