Growth of GaAs on GaAs-coated Si by liquid-phase epitaxy.
| Autor: | Sakai, Shiro, Matyi, R. J., Shichijo, H. |
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| Zdroj: | Journal of Applied Physics; 2/15/1988, Vol. 63 Issue 4, p1075, 5p, 4 Diagrams, 1 Chart, 5 Graphs |
| Abstrakt: | Describes the detailed liquid-phase-epitaxial (LPE) growth conditions of gallium arsenide (GaAs) on gallium arsenide-coated silicon. Conditions that influence LPE growth; Mechanism of LPE growth; Comparison between growth profiles of GaAs and GaAs-coated silicon. |
| Databáze: | Complementary Index |
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