| Autor: |
Bour, D. P., Shealy, J. R., McKernan, S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1988, Vol. 63 Issue 4, p1241, 3p, 1 Chart, 3 Graphs |
| Abstrakt: |
Focuses on the formulation of the gallium [sub0.5]indium[sub0.5]phosphorous/gallium arsenide interface during low pressure organometallic vapor phase epitaxial growth. Information on the interface; Procedures for epitaxial growth; Influence of Raman scattering on interface decomposition; Effect of growth stop on intermixing into gallium arsenide layers. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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