Autor: |
Nakamura, T., Katoda, T. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 2/15/1985, Vol. 57 Issue 4, p1084, 5p |
Abstrakt: |
Deals with the use of Raman spectroscopy in studying local vibrational modes of lattice site silicon implanted in gallium arsenides. Information on the use of silicon ion implantation into semi-insulating gallium arsenide and subsequent thermal anneal for the fabrication of field-effect transistors and integrated circuits; Experiment; Results and discussion. |
Databáze: |
Complementary Index |
Externí odkaz: |
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