Electrical activation and local vibrational mode from Si-implanted GaAs.

Autor: Nakamura, T., Katoda, T.
Předmět:
Zdroj: Journal of Applied Physics; 2/15/1985, Vol. 57 Issue 4, p1084, 5p
Abstrakt: Deals with the use of Raman spectroscopy in studying local vibrational modes of lattice site silicon implanted in gallium arsenides. Information on the use of silicon ion implantation into semi-insulating gallium arsenide and subsequent thermal anneal for the fabrication of field-effect transistors and integrated circuits; Experiment; Results and discussion.
Databáze: Complementary Index