| Autor: |
Newman, N., Petro, W. G., Kendelewicz, T., Pan, S. H., Eglash, S. J., Spicer, W. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1985, Vol. 57 Issue 4, p1247, 5p |
| Abstrakt: |
Discusses a study that used electrical device measurements and valence-band and core-level photoemission spectroscopy to investigate annealing-induced changes in the barrier height of gold:n-type gallium arsenide Schottky diodes. Details on the experiment; Electrical measurements on diodes; Conclusion of the study. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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