Misfit dislocation generation mechanisms in InGaAs/GaAs heterostructures.

Autor:	Kui, J., Jesser, W. A., Jones, S. H.
Předmět:	DISLOCATIONS in metals INTERFACES (Physical sciences)
Zdroj:	Journal of Applied Physics; 12/15/1994, Vol. 76 Issue 12, p7829, 4p, 1 Black and White Photograph, 5 Graphs
Abstrakt:	Presents a study which investigated the misfit dislocation generation mechanism at an InGaAs/GaAs heterointerface. Experimental details; Results and discussion; Conclusion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu