Physical and electrical investigation of ohmic contacts to AlGaAs/GaAs heterostructures.

Autor: Taylor, R. P., Coleridge, P. T., Davies, M., Feng, Y., McCaffrey, J. P., Marshall, P. A.
Předmět:
Zdroj: Journal of Applied Physics; 12/15/1994, Vol. 76 Issue 12, p7966, 7p, 4 Black and White Photographs, 4 Diagrams, 2 Charts, 5 Graphs
Abstrakt: Presents a study which investigated the mechanism by which nickel-gold-germanium metallizations establish electrical contact to the two-dimensional electron gas in modulation-doped AlGaAs/GaAs heterostructures. Examination of samples using transmission electron microscopy; Success of the contacting procedure; Conclusion.
Databáze: Complementary Index