Autor: |
Taylor, R. P., Coleridge, P. T., Davies, M., Feng, Y., McCaffrey, J. P., Marshall, P. A. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 12/15/1994, Vol. 76 Issue 12, p7966, 7p, 4 Black and White Photographs, 4 Diagrams, 2 Charts, 5 Graphs |
Abstrakt: |
Presents a study which investigated the mechanism by which nickel-gold-germanium metallizations establish electrical contact to the two-dimensional electron gas in modulation-doped AlGaAs/GaAs heterostructures. Examination of samples using transmission electron microscopy; Success of the contacting procedure; Conclusion. |
Databáze: |
Complementary Index |
Externí odkaz: |
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