Photoluminescence and electrical properties of erbium-doped indium oxide films prepared by rf sputtering.

Autor: Kim, Hong Koo, Li, Cheng Chung, Nykolak, Gerald, Becker, Philippe C.
Předmět:
Zdroj: Journal of Applied Physics; 12/15/1994, Vol. 76 Issue 12, p8209, 3p, 3 Graphs
Abstrakt: Presents information on a study which discussed photoluminescence and electrical properties of erbium (Er)-doped indium oxide films prepared by radio frequency magnetron sputtering. Deposition conditions used; Peak structure of the Er-doped indium oxide; Substrates used in the experiment.
Databáze: Complementary Index