| Autor: |
Ashwin, M. J., Fahy, M. R., Newman, R. C., Wagner, J., Robbie, D. A., Sangster, M. J. L., Silier, I., Bauser, E., Braun, W., Ploog, K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/15/1994, Vol. 76 Issue 12, p7839, 11p, 3 Charts, 6 Graphs |
| Abstrakt: |
Presents information on a study which described infrared absorption and Raman scattering measurements of the localized vibration modes due to defects incorporating silicon impurities in p-type silicon-doped gallium arsenide grown by liquid phase epitaxy on (001) planes. Material compensated during growth; Discussion of p-type material compensated by 2 megaelectronvolt electron irradiation; Raman spectra of molecular beam epitaxy p-type samples. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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