Photoluminescence characterization of GaAs quantum well laser structure with AlAs/GaAs superlattices waveguide.

Autor: Dotor, M. L., Recio, M., Golmayo, D., Briones, F.
Předmět:
Zdroj: Journal of Applied Physics; 12/15/1992, Vol. 72 Issue 12, p5861, 6p, 1 Diagram, 1 Chart, 6 Graphs
Abstrakt: Reports on the photoluminescence characterization of gallium arsenide (GaAs) quantum well laser structure with aluminum arsenide/GaAs superlattices waveguide. Analysis of carrier transport mechanisms through the superlattices; Evolution of the photoluminescence of the quantum well and the superlattice confining layers; Temperature dependence of the quantum wells and superlattices luminescence peak energies.
Databáze: Complementary Index