Autor: |
Dotor, M. L., Recio, M., Golmayo, D., Briones, F. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 12/15/1992, Vol. 72 Issue 12, p5861, 6p, 1 Diagram, 1 Chart, 6 Graphs |
Abstrakt: |
Reports on the photoluminescence characterization of gallium arsenide (GaAs) quantum well laser structure with aluminum arsenide/GaAs superlattices waveguide. Analysis of carrier transport mechanisms through the superlattices; Evolution of the photoluminescence of the quantum well and the superlattice confining layers; Temperature dependence of the quantum wells and superlattices luminescence peak energies. |
Databáze: |
Complementary Index |
Externí odkaz: |
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