| Autor: |
Major, J. S., Kish, F. A., Richard, T. A., Sugg, A. R., Baker, J. E., Holonyak, N. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/15/1990, Vol. 68 Issue 12, p6199, 8p |
| Abstrakt: |
Describes silicon impurity-induced layer disordering and Al-Ga interdiffusion in Al[sub x]Ga[sub 1-x] As-GaAs quantum-well heterostructures using open-tube rapid thermal annealing in a flowing N[sub 2]/H[sub 2] ambient. Enhancement of Ga interdiffusion; Diffusion on point defects; Effects of dielectric encapsulation on Al-Ga interdiffusion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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