| Autor: |
Bradley, P., Ruby, W., Hebert, D., Van Duzer, T. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/15/1989, Vol. 66 Issue 12, p5872, 8p |
| Abstrakt: |
Presents information on a study which fabricated amorphous-silicon-barrier Josephson junctions to test the theory of resonant tunneling due to localized electron states. Potential barrier and image effects; Localized states and resonant tunneling; Conductance of a single localized state; Resonant tunneling current in barriers with embedded oxide layers. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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