| Autor: |
Jentzsch, F., Froitzheim, H., Theile, R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/15/1989, Vol. 66 Issue 12, p5901, 7p |
| Abstrakt: |
Presents information on a study which measured the change of conductance during deposition of nickel (Ni) on silicon(111) under ultrahigh vacuum conditions for the first time. Results of low-energy electron diffraction optics; Measurement of the temperature of the sample by a Ni/NiCr thermocouple; Preparation of contacts; Comparison of the temperature dependence of the resistance of two NiS[sub2]Si(111) samples with different preparations. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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