Bismuth- and thallium-doped lead telluride grown by molecular-beam epitaxy.

Autor: Partin, D. L., Thrush, C. M., Simko, S. J., Gaarenstroom, S. W.
Předmět:
Zdroj: Journal of Applied Physics; 12/15/1989, Vol. 66 Issue 12, p6115, 6p, 2 Charts, 5 Graphs
Abstrakt: Presents study which examined bismuth- and thallium-doped lead telluride grown by molecular-beam epitaxy. Sample preparation; Results of scanning Auger electron spectroscopy; Results of ion mass spectroscopy.
Databáze: Complementary Index