| Autor: |
Lin, Benjamin S. M., Hwang, J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1994, Vol. 76 Issue 4, p2442, 6p, 4 Diagrams, 2 Graphs |
| Abstrakt: |
Deals with a study which described the conduction and valence band photoemission mechanisms in two-dimensional--three-dimensional structures. Reason for the need for the thickness of the active layers in heterojunction internal photoemission infrared detectors; Structures in which conduction and valence band photoemission mechanisms have been introduced; Carrier types; Steps by which metal/semiconductor Schottky diodes are understood. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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