| Autor: |
Boudry, J. M., Antonuk, L. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1994, Vol. 76 Issue 4, p2529, 6p, 3 Diagrams, 1 Chart, 9 Graphs |
| Abstrakt: |
Focuses on a study which detailed the measurement of current-noise-power spectra of thin-film transistors fabricated from hydrogenated amorphous silicon. Status of the noise levels in the conducting mode; Use of pixelated arrays; Composition of each pixel of the arrays; Description of the thin-film transistor. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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