| Autor: |
Talbot, E., Roussel, M., Genevois, C., Pareige, P., Khomenkova, L., Portier, X., Gourbilleau, F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; May2012, Vol. 111 Issue 10, p103519-103519-6, 1p, 1 Color Photograph, 2 Black and White Photographs, 1 Chart, 3 Graphs |
| Abstrakt: |
Hafnium silicate films were fabricated by RF reactive magnetron sputtering technique. Fine microstructural analyses of the films were performed by means of high-resolution transmission electron microscopy and atom probe tomography. A thermal treatment of as-grown homogeneous films leads to a phase separation process. The formation of SiO2 and HfO2 phases as well as pure Si one was revealed. This latter was found to be amorphous Si nanoclusters, distributed uniformly in the film volume. Their mean diameter and density were estimated to be about 2.8 nm and (2.9 ± 0.4) × 1017 Si-ncs/cm3, respectively. The mechanism of the decomposition process was proposed. The obtained results pave the way for future microelectronic and photonic applications of Hf-based high-κ dielectrics with embedded Si nanoclusters. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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