Quantitative characterization of modulation-doped strained quantum wells through line-shape analysis of room-temperature photoluminescence spectra.

Autor:	Brierley, Steven K.
Předmět:	PHOTOLUMINESCENCE QUANTUM wells DOPED semiconductor superlattices
Zdroj:	Journal of Applied Physics; 8/15/1993, Vol. 74 Issue 4, p2760, 8p
Abstrakt:	Reports on the use of room-temperature photoluminescence to characterize modulation-doped AlGaAs/InGaAs/superlattice strained later quantum wells. Sample preparation; Details of the line-shape model.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu