Characterization of ultrathin oxide prepared by low-temperature wafer loading and nitrogen preannealing before oxidation.

Autor: Wu, S. L., Lee, C. L., Lei, T. F., Liang, M. S.
Předmět:
Zdroj: Journal of Applied Physics; 8/15/1992, Vol. 72 Issue 4, p1378, 8p, 2 Black and White Photographs, 8 Graphs
Abstrakt: Presents a study that observed the high-performance ultrahin oxide prepared by a low-temperature wafer loading and nitrogen preannealing before oxidation. Experimental procedures; Structural morphology and oxide thickness of conventionally thermal oxidation and special oxidation samples; Conclusion.
Databáze: Complementary Index