A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition.

Autor: Lush, G. B., MacMillan, H. F., Keyes, B. M., Levi, D. H., Melloch, M. R., Ahrenkiel, R. K., Lundstrom, M. S.
Předmět:
Zdroj: Journal of Applied Physics; 8/15/1992, Vol. 72 Issue 4, p1436, 7p, 1 Diagram, 3 Charts, 8 Graphs
Abstrakt: Presents a study that explored the minority electron carrier recombination in n-type gallium arsenide heterostructures using photoluminescence decay measurements. Methodology; Examination of the low density decay constants of the samples; Analysis of the photon recycling in the samples.
Databáze: Complementary Index