| Autor: |
El-Zein, N., Holonyak, N., Kish, F. A., Sugg, A. R., Richard, T. A., Dallesasse, J. M., Smith, S. C., Burnham, R. D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1991, Vol. 70 Issue 4, p2031, 4p, 4 Black and White Photographs, 1 Graph |
| Abstrakt: |
Offers information on a study which demonstrated the capability of the native Al[subx]Ga[sub1-x]As oxide to mask silicon diffusion and thus impurity-induced layer disordering. Properties of the materials; Description of the experimental setup; Results and discussion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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