Critical layer thickness and strain relaxation measurements in GaSb(001)/AlSb structures.

Autor: Gossmann, H.-J., Davidson, B. A., Gualtieri, G. J., Schwartz, G. P., Macrander, A. T., Slusky, S. E., Grabow, M. H., Sunder, W. A.
Předmět:
Zdroj: Journal of Applied Physics; 8/15/1989, Vol. 66 Issue 4, p1687, 8p, 1 Chart, 7 Graphs
Abstrakt: Features a study that measured critical layer thicknesses and strain relaxation for aluminum antimony (AlSb) single layers and gallium antimony/AlSb superlattices. Use of ion scattering, x-ray diffraction and Raman scattering; Ways to determine crystalline quality and strain in thin films; Extraction of the angular position of the minima in the angular scans.
Databáze: Complementary Index