| Autor: |
Marshall, T., Colak, S., Cammack, D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1989, Vol. 66 Issue 4, p1753, 6p, 2 Diagrams, 2 Charts, 4 Graphs |
| Abstrakt: |
Examines the room-temperature electrical transport properties of zinc selenide (ZnSe) epilayers grown above the critical layer thickness on n-gallium arsenide substrates. Application of molecular beam epitaxy; Findings of the direct current versus voltage measurements; Variation of the effective thickness of the laterally conducting ZnSe. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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